Methods of forming threshold voltage implant regions

ABSTRACT

The invention includes methods of forming channel region implants for two transistor devices simultaneously, in which a mask is utilized to block a larger percentage of a channel region location of one of the devices relative to the other. The invention also pertains to methods of forming capacitor structures in which a first capacitor electrode is spaced from a semiconductor substrate by a dielectric material, a second capacitor electrode comprises a conductively-doped diffusion region within the semiconductor material, and a capacitor channel region location is beneath the dielectric material and adjacent the conductively-doped diffusion region. An implant mask is formed to cover only a first portion of the capacitor channel region location and to leave a second portion of the capacitor channel region location uncovered. While the implant mask is in place, dopant is implanted into the uncovered second portion of the capacitor channel region location.

TECHNICAL FIELD

The invention pertains to methods of forming capacitor structures,methods of forming threshold voltage implants, and methods of formingchannel region implants.

BACKGROUND OF THE INVENTION

Field effect transistors (FETS) are common devices of integratedcircuitry. One method of tailoring the properties of an FET is to adjustthe dopant level within a channel region device, which can adjust athreshold voltage of the device. Dopants provided within the channelregions of FETs are frequently referred to as threshold voltageimplants, due to the effect that such dopants can have on thresholdvoltage.

FIG. 1 shows a construction 10 comprising an exemplary prior art FET 12.The FET is supported by a semiconductor substrate 14. Substrate 14 cancomprise any suitable semiconductor material, and in particular aspectscan comprise, consist essentially of or consist of monocrystallinesilicon lightly background-doped with p-type dopant. To aid ininterpretation of the claims that follow, the terms “semiconductivesubstrate” and “semiconductor substrate” are defined to mean anyconstruction comprising semiconductive material, including, but notlimited to, bulk semiconductive materials such as a semiconductive wafer(either alone or in assemblies comprising other materials thereon), andsemiconductive material layers (either alone or in assemblies comprisingother materials). The term “substrate” refers to any supportingstructure, including, but not limited to, the semiconductive substratesdescribed above.

Substrate 14 can be part of a monocrystalline silicon wafer, andaccordingly can correspond to so-called bulk silicon. In other aspectsof the prior art, substrate 14 can correspond to a thin layer ofsemiconductive material which is formed over a layer of insulativematerial (not shown), and accordingly can be part of asilicon-on-insulator (SOI) construction.

Transistor device 12 comprises a pair of source/drain regions 16 and 18extending within the semiconductor substrate 14. Source/drain regions 16and 18 correspond to conductively-doped diffusion regions, and cancomprise one or both of n-type dopant and p-type dopant.

Transistor device 12 also includes electrically conductive gatelinematerial 20 over substrate 14 and between the regions 16 and 18.Gateline material 20 forms a gate 13 of the transistor device, and cancomprise any suitable conductive material or combination of conductivematerials. In particular aspects, gateline material 20 can comprise oneor more electrically conductive materials selected from the groupconsisting of metals, metal compounds, and conductively-doped silicon.Gateline material 20 can be a portion of a wordline which extends in adirection orthogonal to the surface of the page of FIG. 1.

Although the gateline material 20 is shown to comprise electricallyconductive material throughout the entire thickness, it is to beunderstood that the gateline material 20 would typically be capped by anelectrically insulative material, such as, for example, a materialcomprising one or both of silicon dioxide and silicon nitride (notshown).

A pair of electrically insulative sidewall spacers 22 and 24 extendalong opposing sidewalls of gate 13. Spacers 22 and 24 can comprise anysuitable electrically insulative material, and in particular aspects cancomprise one or both of silicon dioxide and silicon nitride.

Gateline material 20 is separated from semiconductor material 14 by adielectric material 26. Dielectric material 26 can comprise any suitablematerial or combination of materials, and in particular aspects willcomprise, consist essentially of, or consist of silicon dioxide.

Transistor device 12 comprises a channel region 28 beneath the gate 13,and between source/drain regions 16 and 18. In operation, gate 13 isutilized to turn on electrical flow within the channel region 28, and tothereby electrically connect source/drain regions 16 and 18 with oneanother. The voltage at which the gate turns on electrical flow betweensource/drain regions 16 and 18 is referred to as a threshold voltage,and the magnitude of such threshold voltage can be influenced by theamount and type of dopant present within channel region 28.

A continuing goal during semiconductor device fabrication is to reducethe number of process steps. Accordingly, processing steps associatedwith fabrication of separate devices are combined. Generally, there willbe numerous FETs formed simultaneously, and some of the FETs will befabricated differently than others during threshold voltage implantingso that the threshold voltage implants of particular devices can betailored for specific applications of the devices. An exemplary priorart method of forming prior art FETs having different threshold voltageimplants relative to one another is described with reference to FIGS.2-5.

Referring initially to FIG. 2, a semiconductor construction 50 isillustrated at a preliminary processing stage. Construction 50 comprisesthe substrate 14, gate dielectric 26, and gateline material 20 describedpreviously with respect to FIG. 1. The gateline material 20 anddielectric material 26 are not yet patterned into the gate shape at theprocessing stage of FIG. 2.

Construction 50 is divided amongst a first segment 52 over which a firsttransistor device will be formed and a second segment 54 over which asecond transistor device will be formed. The first and second transistordevices will have different threshold voltage implants relative to oneanother. It is to be understood that the first transistor device willtypically be part of a set of first devices fabricated identicallyrelative to one another, and a second transistor device will typicallybe part of a set of second transistor devices which are also fabricatedidentically to one another.

A masking material 56 is provided over the first segment 52, and notover the second segment 54. Subsequently, a threshold voltage implant isconducted to implant dopant 60 into substrate 14. The masking material56 prevents dopant 60 from penetrating into the substrate 14 associatedwith segment 52, while the unprotected segment 54 has dopant 60penetrating therein to form a threshold voltage implant region 62 withinsubstrate 14 (the threshold voltage implant region is demarcated with adashed line in FIG. 2). The masking material 56 utilized to protectsegment 52 can comprise any suitable material, and in particular aspectswill comprise, consist essentially of or consist of photoresist. In suchaspects, masking material 56 can be patterned into a desired shapeutilizing photolithographic processing.

Referring next to FIG. 3, masking material 56 (FIG. 2) is stripped fromover construction 50, and another masking material 63 is formed to beover segment 54 and not over segment 52. Subsequently, a dopant 64 isimplanted into segment 52 to form a threshold voltage implant 66.Masking material 63 prevents dopant 64 from entering the substrate 14 ofsegment 54. Masking material 63 can comprise the same compositionsdiscussed above regarding masking material 56, and accordingly, can, inparticular aspects, comprise, consist essentially of or consist ofphotoresist.

Referring next to FIG. 4, masking material 63 (FIG. 3) is removed. Sincethe threshold voltage implant regions 62 and 66 are formed at differenttimes relative one another, the implant regions can be formed tocomprise different dopant concentrations relative to one another.Accordingly, the regions 62 and 66 can be specifically tailored fordifferent transistor device applications relative to one another.

Referring next to FIG. 5, transistor constructions 70 and 72 are formedover segments 52 and 54, respectively. Transistor construction 70comprises source/drain regions 74 and 76, a gate 78 patterned fromgateline material 20 and dielectric material 26, and sidewall spacers 80formed along sidewalls of gate 78. Transistor device 72 comprisessource/drain regions 82 and 84, a gate 86 patterned from gatelinematerial 20 and dielectric material 26, and sidewall spacers 88 formedalong sidewalls of gate 86.

The channel implant regions 62 and 66 form channel regions for gates 72and 70, respectively. Since the channel implant regions were formed atdifferent times relative to one another and can comprise differentdopant concentrations (and in some aspects different dopant types)relative to one another, the threshold voltage of transistor device 72can be tailored to be different than that of device 70 through the typeof implant utilized for region 62 relative to that utilized for region66.

It is desired to develop new methods for forming multiple transistorswhich are improved relative to the methods discussed above in one orboth of the number of processing steps utilized and the complexity ofthe processing steps utilized.

Although the invention was motivated, at least in part, by the desire todevelop new methodologies for simultaneously forming differentlytailored threshold voltage implants amongst a plurality of transistordevices, the invention is not limited to such applications.

SUMMARY OF THE INVENTION

In one aspect, the invention encompasses a method of forming thresholdvoltage implants. A semiconductor substrate is provided. The substratehas at least two channel region locations defined therein. One of the atleast two channel region locations is a first channel region locationand another is a second channel region location. The first and secondchannel region locations have first and second areas, respectively. Amask is provided to block a larger percentage of the second area thanthe first area. While the mask is in place, a threshold voltage implantis conducted into both the second channel region location and the firstchannel region location.

In one aspect, the invention pertains to a method of forming channelregion implants. A semiconductor substrate is provided. The substratehas at least two channel region locations defined therein. One of thetwo channel region locations is a first channel region location andanother is a second channel region location. A mask is provided whichcovers a first portion of the second channel region location whileleaving a second portion of the second channel region locationuncovered. The mask leaves an entirety of the first channel regionlocation uncovered. Dopant is implanted into the uncovered secondportion of the second channel region location and the uncovered firstchannel region location. The dopant is diffused into at least some ofthe first portion of the second channel region location.

In one aspect, the invention encompasses a method of forming a capacitorstructure. A semiconductor material is provided. A dielectric materialis formed over a portion of the semiconductor material. The dielectricmaterial has a lateral periphery. At least some of the portion of thesemiconductor material beneath the dielectric material is a capacitorchannel region location. A first capacitor electrode is formed to haveat least a portion over the dielectric material. At least oneconductively-doped diffusion region is formed within the semiconductormaterial. At least a portion of the diffusion region is laterallyoutward of the lateral periphery of the dielectric material. Theconductively-doped diffusion region is at least part of a secondcapacitor electrode. An implant mask is formed over a portion of thecapacitor channel region location to leave another portion of thecapacitor channel region location uncovered. While the implant mask isover the portion of the capacitor channel region location, dopant isimplanted into the uncovered portion of the capacitor channel regionlocation.

BRIEF DESCRIPTION OF THE DRAWINGS

Preferred embodiments of the invention are described below withreference to the following accompanying drawings.

FIG. 1 is a diagrammatic, cross-sectional view of a semiconductor waferfragment illustrating a prior art field effect transistor device.

FIG. 2 is a diagrammatic, cross-sectional view of a pair ofsemiconductor wafer fragments at a preliminary processing stage of aprior art method for forming field effect transistor devices.

FIG. 3 is a view of the FIG. 2 wafer fragments shown at a prior artprocessing stage subsequent to that of FIG. 2.

FIG. 4 is a view of the FIG. 2 wafer fragments shown at a prior artprocessing stage subsequent to that of FIG. 3.

FIG. 5 is a view of the FIG. 2 wafer fragments shown at a prior artprocessing stage subsequent to that of FIG. 4.

FIG. 6 is a diagrammatic, cross-sectional view of a pair of fragments ofa semiconductor construction shown at a preliminary processing stage ofan exemplary aspect of the present invention.

FIG. 7 is a view of the FIG. 6 wafer fragments shown at a processingstage subsequent to that of FIG. 6.

FIG. 8 is a view of the FIG. 6 wafer fragments shown at a processingstage subsequent to that of FIG. 7.

FIG. 9 is a view of the FIG. 6 wafer fragments shown at a processingstage subsequent to that of FIG. 8.

FIG. 10 is a view of the FIG. 6 wafer fragments shown at a processingstage subsequent to that of FIG. 9.

FIG. 11 is a diagrammatic, fragmentary top view of a pair of fragmentsof a semiconductor construction at the processing stage of FIG. 6. Thecross-section of FIG. 6 is shown along the line 6-6 of FIG. 11.

FIG. 12 is a view of the FIG. 11 fragments shown at a processing stagesubsequent to that of FIG. 11 in accordance with an exemplary aspect ofthe invention.

FIG. 13 is a view of the FIG. 11 fragments shown at a processing stagesubsequent to that of FIG. 11 in accordance with another aspect of theinvention.

FIG. 14 is a view of the FIG. 11 fragments shown at a processing stagesubsequent to that of FIG. 11 in accordance with yet another aspect ofthe invention.

FIG. 15 is a view of the FIG. 11 fragments shown at a processing stagesubsequent to that of FIG. 11 in accordance with yet another aspect ofthe invention.

FIG. 16 is a diagrammatic, cross-sectional view along the line 16-16 ofFIG. 15.

FIG. 17 is a view of the FIG. 16 wafer fragments shown at a processingstage subsequent to that of FIG. 16.

FIG. 18 is a diagrammatic, cross-sectional fragmentary view of asemiconductor construction at a preliminary processing stage of anexemplary aspect of the invention for forming a capacitor construction.

FIG. 19 is a top view of a fragment comprising the FIG. 18cross-section, with the cross-section of FIG. 18 being along the line18-18 of FIG. 19.

FIGS. 20 and 21 are views of the fragments of FIGS. 18 and 19,respectively, shown at a processing stage subsequent to that of FIGS. 18and 19. The cross-section of FIG. 20 is along the line 20-20 of FIG. 21.

FIG. 22 is a view of the FIG. 18 cross-section shown at a processingstage subsequent to that of FIG. 20.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

This disclosure of the invention is submitted in furtherance of theconstitutional purposes of the U.S. Patent Laws “to promote the progressof science and useful arts” (Article 1, Section 8).

As circuit density increases, and circuit function becomes morecomplicated, it is becoming increasingly important to offer transistorswith different threshold voltages. Prior art methods for providingdifferent threshold voltages amongst various transistors utilize extramasks to adjust doping concentration, which increases the costs andcomplexity associated with the manufacture semiconductor devices. Oneaspect of the present invention is a method of providing differentamounts of masking over channel region locations during a thresholdvoltage implant so that threshold voltages of different transistors arespecifically tailored to the functions of the transistors. This aspectof the invention is discussed with reference to FIGS. 6-17.

Referring initially to FIG. 6, a construction 100 is illustrated at apreliminary processing stage of an exemplary method of the presentinvention. Construction 100 comprises the segments 52 and 54 discussedpreviously with reference to the prior art in FIG. 2. Each of thesegments comprises semiconductor substrate 14, dielectric material 26,and gateline material 20. Ultimately, a first transistor is to be formedover segment 52 and a second transistor is to be formed over segment 54,with the first and second transistors differing in threshold voltagerelative to one another. In some aspects, segment 52 can be referred toas a first portion of a semiconductor construction, and segment 54 canbe referred to as a second portion of the semiconductor construction.The first portion 52 can be considered to have a first channel regionlocation defined therein where a channel of a first transistor isultimately to be formed, and the second portion 54 can be considered tohave a second channel region location defined therein where a channel ofa second transistor is ultimately to be formed. The first and secondchannel region locations are illustrated diagrammatically in FIG. 6 aslocations 102 and 104, respectively.

The channel region locations 102 and 104 will have an area when viewedfrom above. Such is diagrammatically illustrated in FIG. 11, where thechannel region locations are illustrated as having rectangular areas. Itis to be understood that the channel region locations arediagrammatically illustrated in FIG. 11, and correspond to definedlocations rather than to specific physically distinguishable locationsat the processing stage of FIG. 11. Although the areas of the channelregion locations 102 and 104 are shown to be rectangular, the areas canhave any suitable shape, including, for example, circular, oval, orother curved shapes, in addition to polygonal shapes. Also, although thechannel region locations 102 and 104 are shown having approximately thesame shape as one another, it is to be understood that the regions canhave different shapes relative one another in other aspects of theinvention (not shown).

Each of the areas 102 and 104 corresponds to a location where a channelregion will ultimately be formed for a final transistor construction,and accordingly corresponds only to the channel region portion of anactive area of the final transistor construction, rather than includingconductively-doped source/drain regions (with the term “source/drain”region including not only heavily doped source/drain regions, but alsoany lightly doped diffusion regions, halo regions, etc. that may bepresent in addition to the heavily doped source/drain regions).

Referring to FIG. 7, a patterned mask 110 is provided over secondportion 54. Mask 110 can comprise any suitable material, and inparticular aspects can comprise, consist essentially of or consist ofphotoresist. The photoresist can be formed into the desired patternutilizing photolithographic processing. The patterned mask has anopening 112 extending therethrough, and is formed to cover a portion ofsecond channel region 104 while leaving another portion of the secondchannel region uncovered. The covered portion of the second channelregion can be referred to as a first portion, and the uncovered portionof the second channel region can be referred to as a second portion.

Mask 110 can be formed to block any desired amount of the area of thefirst channel region location 104. In particular aspects, the mask willblock at least about 25% of such area, at least about 50% of such area,or at least about 75% of such area. In some aspects, the mask can coverfrom about 25% of the area to about 75% of the area.

Ultimately, and as discussed below, the mask is utilized to reduce theamount of implanted dopant reaching channel region location 104 duringan implant of the dopant into both channel region location 102 andchannel region location 104. The implanted dopant will correspond to,for example, a threshold voltage implant, and accordingly the size ofopening 112 relative to the total area of channel region location 104can tailor the amount of dopant ultimately reaching channel regionlocation 104. The dopant provided through opening 112 and into channelregion location 104 is ultimately diffused throughout the channel regionlocation 104 by appropriate thermal processing (as discussed below).Accordingly, the dopant per unit area formed within channel regionlocation 104 with the implant is less than the dopant per unit areaformed within the unblocked first channel region location 102. In someaspects of the invention, mask 112 can be formed to entirely blockchannel region location 104 while leaving sidewall edges along thechannel region exposed for the dopant implant, and subsequently thedopant is diffused laterally into the channel region location 104.Accordingly, the mask 110 can, in some aspects, block about 100% of thearea of channel region 104.

Although the mask 110 is not blocking any of the first channel regionlocation 102 in the shown aspect of the invention, it is to beunderstood that the mask can be formed to block some of the firstchannel region location 102 in other aspects (not shown). In such otheraspects, the mask can block a larger percentage of the area of thesecond channel region location 104 than of the area of the first channelregion location 102 so that a subsequent implant into the first andsecond channel region locations provides more dopant into the firstchannel region location 102 than into the second channel region location104.

Referring to FIG. 8, dopant 114 is shown being implanted into segments52 and 54 of construction 100 to form an implant region 116 within firstchannel region 102, and an implant region 118 within second channelregion location 104. Since the mask 110 blocks some of the secondchannel region location 104, the amount of dopant implanted into thesecond channel region is less than the amount of dopant implanted intothe first channel region 102. The implanted dopant can correspond to,for example, a threshold voltage implant. The substrate 14 cancorrespond to, for example, monocrystalline silicon, and accordingly thediffusion regions 116 and 118 can be conductively-doped diffusionregions extending within monocrystalline silicon material.

Referring next to FIG. 9, mask 110 (FIG. 8) is removed, and construction100 is subjected to appropriate thermal processing to diffuse dopantfrom region 118 (FIG. 8) across a substantial entirety (and in someaspects at least an entirety) of second channel region location 104. Thediffused dopant forms a doped region 120 extending across at least someof the portion of second channel region location 104 that had beencovered by mask 110. The dopant can also diffuse outwardly of he channelregion location 104 in some aspects (not shown).

The channel region locations 102 and 104 both contain dopant from theimplant of FIG. 8. However, the concentration of dopant (i.e., theamount of dopant per unit area) within channel region location 104 isless than the concentration of dopant within channel region location 102due to the mask 110 (FIGS. 7 and 8) blocking some of the dopant duringthe implant. Accordingly, the dopant levels within regions 116 and 120can be individually tailored even though both doped regions were formedduring a common implant.

Referring next to FIG. 10, construction 100 is illustrated after channelregion locations 102 and 104 are incorporated into channel regions oftransistor devices 132 and 134, respectively. Transistor device 132comprises a pair of source/drain regions 136 and 138 formed on opposinglateral sides of channel region location 102, and transistor device 134comprises source/drain regions 140 and 142 formed on opposing lateralsides of channel region location 104. Further, transistor device 132comprises a gateline 144 patterned from dielectric material 26 andgateline material 20, and transistor device 134 comprises a gateline 146patterned from the materials 26 and 20. Additionally, transistor device132 comprises a pair of sidewall spacers 148 formed on opposingsidewalls of gateline 144, and transistor device 134 comprises a pair ofsidewall spacers 150 formed on the opposing sidewalls of gateline 146.

The transistor devices 132 and 134 can be identical to one another inall respects except for the amount of dopant 114 (FIG. 8) providedwithin the channel region locations 102 and 104. If the dopant 114impacts threshold voltage, then the threshold voltages of devices 132and 134 will be different from one another. Accordingly, the thresholdvoltages of the devices 132 and 134 can be separately and individuallytailored for specific functions of the devices 132 and 134 utilizingmethodology of the present invention.

Devices 132 and 134 can also differ from one another in aspects otherthan the amount of dopant 114 provided within the locations 102 and 104in some embodiments of the invention. For instance, the source/drainregions 136 and 138 can be differently doped than the source/drainregions 140 and 142. Such difference can be either through the amount ofdoping or the type of dopant within the regions. Also, substrate 14 canhave a different type of background doping in segment 52 than in segment54. For instance, device 132 may correspond to a PMOS (p-type metaloxide semiconductor) device such that source/drain regions 136 and 138are primarily p-type doped, and substrate 14 is primarily backgroundn-type doped; and device 134 can correspond to an NMOS (n-type metaloxide semiconductor) device such that source/drain regions 140 and 142are primarily n-type doped and substrate 14 is primarily p-typebackground doped. Alternatively, device 134 can correspond to a PMOSdevice and device 132 can correspond to an NMOS device.

In aspects in which the transistor devices 132 and 134 differ in typerelative to one another (i.e., in which one of the devices is a PMOSdevice and the other is an NMOS device), the gateline material 20 of oneof the transistor devices can be different than the gateline material 20of the other device.

Although the invention is described in FIGS. 6-10 as having the gatelinematerial 20 and dielectric material 26 both provided over substrate 14prior to the formation of masking material 110 and the implant of dopant114, it is to be understood that the invention encompasses other aspects(not shown) in which the formation of masking material 110 and theimplant occur before provision of one or both of dielectric material 26and gateline material 20. For instance, the masking material 110 can beformed directly over a surface of substrate 14 and the implant can occurprior to the provision of the materials 26 and 20 in some embodiments ofthe invention.

FIGS. 12-14 illustrate exemplary masking patterns that can be utilizedin aspects of the present invention.

Referring initially to FIG. 12, construction 100 is shown in the topview of FIG. 11, and after masking material 110 has been formed over thesegment 54. The shown masking material comprises a pair of strips 160and 162 which extend over portions of channel region location 104 whileleaving a central region 164 of the channel region location 104uncovered. The shown channel region 104 can be considered to comprise apair of opposing edges 165 and 167, and the masking material 110 can beconsidered to comprise a pair of spaced apart strips 160 and 162 whichare along the opposing edges 165 and 167. The covered portion of channelregion location 104 is shown in dashed-line view in FIG. 12 to indicatethat this portion is beneath masking material 110.

FIG. 13 illustrates another aspect of the invention in which maskingmaterial 110 is formed as a strip over a portion of second channelregion location 104. The aspect of FIG. 13 is an inverse of the aspectof FIG. 12 in that the covered region of second channel region location104 is a strip along the center of the channel region, while uncoveredportions of second channel region location 104 are along the sidewalledges 165 and 167 of the location 104. More specifically, the uncoveredportions of channel region location 104 can be considered to correspondto strips 170 and 172 along edges 165 and 167, respectively, and thecovered portion is a strip 174 along a central region between theuncovered strips 170 and 172.

Referring next to FIG. 14, an aspect of the invention is illustrated inwhich masking material 110 is patterned to form a strip 180 over aportion of channel region location 102, as well as strips 182 and 184over portions of second channel region location 104. Even thoughportions of both first channel region 102 and second channel regionlocation 104 are blocked, the percentage of the area of first channelregion 102 that is blocked is less than the percentage of the area ofsecond channel region 104 that is blocked, and accordingly more dopantwill be implanted into region 102 during the implant (FIG. 8) than isimplanted into channel region location 104.

It is noted that the embodiments discussed above with reference to FIGS.12 and 13 had both of the lateral edges 165 and 167 of second channelregion location 104 being identical to one another in that both wereeither blocked or unblocked. In contrast, the embodiment of FIG. 14 hasone of the edge regions blocked (specifically, edge region 165) whileleaving the other unblocked (specifically, edge region 167).

FIG. 15 illustrates an aspect of the invention in which masking material110 covers an entirety of second channel region location 104. Suchaspect is further illustrated in a cross-sectional view of FIG. 16 inwhich it can be seen that the lateral periphery of masking material 110is approximately coextensive with the lateral edges 165 and 167 ofchannel region location 104. In other words, masking material 110 haslateral edges 190 and 192 which are at approximately the same locationsas the lateral sidewalls 165 and 167 of channel region location 104.

The construction of FIG. 16 is shown after the construction has beensubjected to the same implant discussed above with reference to FIG. 8.The implant has formed the doped region 116 within segment 52, and hasformed doped regions 194 and 196 within segment 54. The doped regions194 and 196 are proximate the lateral peripheries of channel regionlocation 104.

Referring next to FIG. 17, the construction 100 of FIG. 16 isillustrated after such construction has been subjected to appropriatethermal processing to diffuse the dopant from regions 194 and 196 (FIG.16) across channel region location 114. Such forms a doped region 198extending across the channel region location 104. The construction ofFIG. 17 can subsequently be treated in accordance with methodologydescribed above with reference to FIG. 10 to form a pair of transistorconstructions analogous to constructions 132 and 134 discussed above.

The methodology of FIGS. 15-17 has advantageously formed doped regionslaterally outward of a channel region location, but close enough to thechannel region location that dopant can diffuse from the doped regionsinto the channel region location. The dopant can correspond to, forexample, a threshold voltage implant dopant.

The methodology described above for forming tailored doped implantsrelative to multiple transistor devices can form relatively flat dopantprofiles within all of the channel region locations with appropriatethermal processing. Generally, dopant diffusion throughout the substrate14 can be very fast so that the dopant fully diffuses throughout achannel region location, even if the dopant is provided within only asmall portion of the channel region location initially. Blocking asignificant portion of a channel region location during an implant cansignificantly reduce a threshold voltage of the transistor device formedto encompass such channel region location relative to a transistordevice encompassing a channel region location which was not blocked. Forinstance, if half of a channel region location is blocked during animplant, the threshold voltage of a transistor encompassing such channelimplant region location can be about 200 millivolts different than atransistor device encompassing a channel region location which was notblocked during the implant of threshold voltage dopant.

Although the processing discussed above forms two different channeldevices with an implant, it is to be understood that the processing canbe readily extended to form more than two different channel devices withthe same implant by providing multiple channel devices which are blockedto different extents relative one another.

The methodology described above can be utilized for forming otherdevices besides transistors, or in addition to transistors. Forinstance, FIGS. 18-22 illustrate application of the methodology tocapacitor fabrication.

Referring to FIG. 18, a semiconductor construction 300 is illustrated ata preliminary processing stage. Semiconductor construction 300 comprisesa substrate 302 which can be identical to the substrate 14 describedabove. Construction 300 also comprises a dielectric material 304 oversubstrate 302, and a conductive material 306 over the dielectricmaterial 304. Conductive material 306 is patterned into a blockcomprising opposing sidewalls 308 and 310. Conductively-doped diffusionregions 312 and 314 extend into substrate 302 proximate the sidewalls308 and 310 of material 306. Material 306 can be referred to as a firstcapacitor electrode, and diffusion regions 312 and 314 can together bereferred to as a second capacitor electrode. A location beneathdielectric material 304 and between source/drain regions 312 and 314corresponds to a capacitor channel region location 320. Such channelregion location is ultimately to be lightly doped withconductivity-enhancing dopant. The amount of dopant provided within thechannel region location 320 can impact the capacitive property of acapacitor formed to comprising the channel region location.

The substrate 302 can comprise, consist essentially of, or consist ofmonocrystalline silicon; the dielectric material 304 can comprise,consist essentially of, or consist of silicon dioxide and can be indirect physical contact with the substrate (as shown); and theconductive material 306 can comprise any suitable materials, including,for example, conductively-doped silicon, and/or metals, and/or metalcompounds and can be in direct physical contact with the dielectricmaterial 304 (as shown). Conductively-doped diffusion regions 312 and314 can comprise any suitable conductivity-enhancing dopant, including,for example, one or both of n-type dopant and p-type dopant.

FIG. 19 shows a top view of the construction of FIG. 18, and showselectrode 306 as a plate having a rectangular shape. It is to beunderstood, however, that electrode 306 can comprise any suitable shape,including, for example, shapes with a circular or curved lateralperiphery, in addition to shapes with polygonal lateral peripheries.

FIGS. 20 and 21 show construction 300 after formation of a patternedmask 330 over capacitor channel location 320. Mask 330 can comprise thesame compositions as discussed above regarding mask 110, and accordinglycan comprise, consist essentially of, or consist of photoresist. Mask330 covers some portions of capacitor channel region location 320, whileleaving other portions exposed. While the mask is in place, a dopant 332is implanted to form doped regions 334 within capacitor channel regionlocation 320. The amount of dopant provided within the capacitor channelregion 320 during the implant of dopant 332 can be tailored by tailoringthe amount of capacitor channel region location 320 that is covered bymask 330 relative to the amount that is not covered by mask 330.

In the shown aspect of the invention, mask 330 comprises a plurality ofstrips which are spaced from one another, and accordingly the coveredportions of capacitor channel region location 320 (which can be referredto as a first portion of the capacitor channel region location)correspond to a plurality of strips which are spaced apart by theuncovered portions of capacitor channel region location 320 (which canbe referred to as a second portion of the capacitor channel regionlocation). The shown aspect of the invention comprises four strips ofmasking material, but it is to be understood that the inventionencompasses other aspects in which less than four strips (for exampletwo strips or three strips) are utilized, or in which more than fourstrips are utilized.

Although the mask 330 is shown provided after formation of dielectricmaterial 304 and conductive material 306, it is to be understood thatthe invention encompasses other aspects (not shown) in which mask 330 isformed and implant 332 conducted before formation of one or both ofdielectric material 304 and conductive material 306. Further, the mask330 can be formed and the implant of dopant 332 conducted beforeprovision of the conductively-doped diffusion regions 312 and 314 insome aspects of the invention (not shown).

Referring next to FIG. 22, construction 300 is illustrated after removalof mask 330 (FIGS. 20 and 21) and after being subjected to a suitablethermal treatment so that diffusion regions 334 (FIG. 20) diffuse toform a single diffusion region 340 extending across the channel regionlocation 320. The structure of FIG. 22 can correspond to a completedcapacitor construction comprising a first electrode 306 capacitivelyconnected to a second electrode containing source/drain regions 312 and314.

The processing of FIGS. 18-22 can be conducted simultaneously with atleast some of the processing described above with reference to FIGS.7-17. In such aspects of the invention, the implant of FIG. 20 can bethe same as the implant of FIG. 8. Accordingly, the dopant 332 of FIG.20 can correspond to the dopant 114 of FIG. 8, and the implant utilizedto provide dopant within channel region locations 102 and 104 can be thesame as the implant utilized to provide dopant within capacitor channelregion location 320. Thus, capacitor channel region location 320 can bedoped simultaneously with the doping of channel region locations 102 and104 in some aspects of the invention.

Utilization of a common implant for doping multiple devices can provideadvantages for semiconductor fabrication, in that such can eliminateprocess steps which can simplify processing and reduce costs associatedwith the processing.

In compliance with the statute, the invention has been described inlanguage more or less specific as to structural and methodical features.It is to be understood, however, that the invention is not limited tothe specific features shown and described, since the means hereindisclosed comprise preferred forms of putting the invention into effect.The invention is, therefore, claimed in any of its forms ormodifications within the proper scope of the appended claimsappropriately interpreted in accordance with the doctrine ofequivalents.

1-19. (canceled)
 20. A method of forming threshold voltage implantregions, comprising: providing a monocrystalline silicon substrate, thesubstrate having at least two channel region locations defined therein,one of said at least two channel region locations being a first channelregion location and another of the at least two channel region locationsbeing a second channel region location; providing a mask which covers asecond portion of the substrate and does not cover a first portion ofthe substrate; an entirety of the first channel region location beingwithin the uncovered first portion; at least some of the second channelregion location being within the covered second portion, said at leastsome of the second channel region location being a covered section ofthe second channel region location; implanting threshold voltage dopantinto the uncovered first portion of the substrate; and diffusing thethreshold voltage dopant into at least some of the covered section ofthe second channel region location.
 21. The method of claim 20 whereinthe covered section of the second channel region location is an entiretyof the second channel region location.
 22. The method of claim 20wherein the covered section of the second channel region location isless than an entirety of the second channel region location.
 23. Themethod of claim 20 wherein the second channel region location has anarea, and wherein the covered section of the second channel regionlocation is less than an entirety of the area of the second channelregion location and greater than 75% of the area of the second channelregion location.
 24. The method of claim 20 wherein the second channelregion has an area, and wherein the covered section of the secondchannel region location is less than an entirety of the area of thesecond channel region location and greater than 50% of the area of thesecond channel region location.
 25. The method of claim 20 wherein thesecond channel region location has an area, and wherein the coveredsection of the second channel region location is less than an entiretyof the area of the second channel region location and greater than 25%of the area of the second channel region location.
 26. The method ofclaim 20 wherein, during the implanting, the first channel regionlocation is entirely covered by a first transistor gate and the secondchannel region location is entirely covered by a second transistor gate;and wherein the mask covers at least a portion of the second transistorgate. 27-44. (canceled)